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Two-Dimensional Stochastic Model for Intercoxinections in Master Slice Integrated Circuits
Two-Dimensional Stochastic Model Interconnections Master Slice Integrated Circuits
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2015/8/12
Two-Dimensional Stochastic Model for Intercoxinections in Master Slice Integrated Circuits.
A Stochastic Model for Interconnections in Custom Integrated Circuits
Stochastic Model Interconnections Custom Integrated Circuits
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2015/8/12
A stochastic model for interconnections in integrated circuits composed of unequal size logic blocks separated by routing channels is described. An algorithm, based on the model, is given for estimati...
Model Order Reduction of Linear Time Variant High Speed VLSI Interconnects using Frequency
Model order Reduction RLC crosstalk
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2010/2/2
Accurate modeling of high speed RLC interconnects
has become a necessity to address signal integrity issues in current
VLSI design. To accurately model a dispersive system of interconnects
at highe...
A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation
MOSFET Velocity saturation Pinch off Conductance Charge
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2010/12/8
In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and ...
A New Method for the Extraction of Diode Parameters Using a Single Exponential Model
Diode characteristic junction parameters linear correlation coefficient
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2010/12/9
A new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (...
A Molecular-Orbital Model for Amorphous Group IV Semiconductors
A Molecular-Orbital Model Amorphous Group IV Semiconductors
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2010/12/10
A theoretical model based on standard molecular-orbital theory and extended Hückel approach is proposed. This model is valid for amorphous group IV semiconductors and represents a substantial improvem...
A New Mathematical Model for Cluster Calculation in Tetrahedrally Bonded Amorphous Semiconductors
Cluster Calculation Bonded Amorphous Semiconductors
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2010/12/15
Tetrahedraily bonded amorphous semiconductors exhibit a structure suitable for applying the so-called extended Hückel theory (EHT) to determine the electronic density of states by means of the cluster...
An Algebraic Model for the Recombination Rate in Semiconductors
the electron-hole recombination rate semiconductors linear algebraic methods
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2010/12/16
This paper consists of a new formalism in order to interpret the electron-hole recombination rate in semiconductors by means of linear algebraic methods; a formulation based on tensorial concepts intr...