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ANISOTROPIC STEP STIFFNESS FROM A KINETIC MODEL OF EPITAXIAL GROWTH
epitaxial growth island dynamics step edge adatoms edge-atoms surface diffusion step stiffness line tension step edge kinetics kinetic steady state Gibbs–Thomson formula Ehrlich–Schwoebel barrier step permeability
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2015/10/16
Starting from a detailed model for the kinetics of a step edge or island boundary, we derive a Gibbs–Thomson-type formula and the associated step stiffness as a function of the step edge orientation a...
We study theoretical aspects of step fluctuations on vicinal surfaces by adding conservative white noise to the Burton-Cabrera-Frank model in one spatial dimension. We consider material deposition fro...
Characterizing equilibrium in epitaxial growth
Characterizing equilibrium epitaxial growth
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2015/10/16
Using a kinetic model of epitaxial growth, we describe how geometry controls kinetic pathways through which external deposition influences the state of a vicinal surface. The state of the surface is d...
Small fluctuations in epitaxial growth via conservative noise
Small fluctuations epitaxial growth conservative noise
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2015/10/16
We study the combined effect of growth (material deposition from above) and nearest-neighbor entropic and force-dipole interactions in a stochastically perturbed system of N line defects (steps) on a ...
Emergence of step flow from an atomistic scheme of epitaxial growth in 1+1 dimensions
step flow atomistic scheme epitaxial growth 1+1 dimensions
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2015/10/16
The Burton-Cabrera-Frank (BCF) model for the flow of line defects (steps) on crystal surfaces has offered useful insights into nanostructure evolution. This model has rested on phenomenological ground...
Epitaxial growth mechanisms of graphene and effects of substrates
Epitaxial growth mechanisms graphene effects of substrates
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2012/2/29
The growth process of single layer graphene with and without substrate is investigated using ab-initio, finite temperature molecular dynamic calculations within density functional theory. An understan...
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
High growth rate 4H-SiC epitaxial growth hot-wall CVD reactor
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2010/11/18
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical
vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We
discuss the use of dichlorosil...
期刊信息
篇名
Layered growth modelling of epitaxial growth processes for SiC polytypes
语种
英文
撰写或编译
撰写
作者
Z. Q. Liu and J. Ni
第一作者单位
清华大学
刊物名称
J.Phys.: Condens. Matter
页面
17, 5355 (2005).
出版日期
2005年
月
日
文章标识...