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The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy
A. Semiconductors B. Impurities in semiconductors C. Optical properties D. Hall effect measurement
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2011/12/13
The nitrogen-doped, p-type ZnO film was grown by plasma-assisted molecular beam epitaxy (P-MBE) on c-plane sapphire (c-Al2O3) using radical NO as oxygen and nitrogen sources. The activation energy of ...
Determination of Activation Energy for the Number Average Degree of Polymerization Using the Fluorescence Method
Determination of Activation Energy Number Average Degree Polymerization Fluorescence Method
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2010/6/28
A novel method based on steady state fluorescence measurements is introduced for measuring the activation energy of the number average degree of polymerization (NADP). Pyrene (Py) was used as a fluore...
Influence of Thermal Conductive Material on the Activation Energy of Amorphous Silicon Thin Films
Thermal Conductive Material Activation Energy
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2010/4/19
The activation energy of amorphous silicon thin films are usually measured by placing the thin film sample on a heating surface and monitoring the change in the dark conductivity as a function of temp...